maximum ratings: (t c =25c unless otherwise noted) symbol units collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5.0 v collector current i c 16 a base current i b 0.5 a power dissipation p d 150 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 1.17 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cer v ce =100v, r be =1.0k 1.0 ma i cer v ce =100v, r be =1.0k , t c =150 c 5.0 ma i ceo v ce =50v 3.0 ma i ebo v eb =5.0v 5.0 ma bv ceo i c =100ma 100 v v ce(sat) i c =10a, i b =40ma 2.5 v v ce(sat) i c =16a, i b =80ma 4.0 v v be(on) v ce =3.0v, i c =10a 3.0 v h fe v ce =3.0v, i c =10a 1000 MJ4032 pnp mj4035 npn complementary silicon power darlington transistors to-3 case central semiconductor corp. tm r0 (4-may 2009) description: the central semiconductor MJ4032, mj4035 types are complementary silicon power darlington transistors designed for general purpose and amplifier applications. marking: full part number
central semiconductor corp. tm to-3 case - mechanical outline MJ4032 pnp mj4035 npn complementary silicon power darlington transistors r0 (4-may 2009) marking: full part number lead code: 1) base 2) emitter c) collector
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